Pressure dependence of the optical-absorption edge of AlN and graphite-type BN

被引：43

作者：

Akamaru, F

Onodera, A

Endo, T

Mishima, O

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

[3] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2002年 / 63卷 / 05期

关键词：

inorganic compounds; high pressure; optical properties;

D O I：

10.1016/S0022-3697(01)00244-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Effect of pressure on the band gaps on AIN and graphite-type BN (g-BN) has been studied up to 2.7 GPa at room temperature by measuring the optical-absorption edge of single crystals of each substance pressurized in a sapphire-anvil cell. The direct band gap of AIN shifted towards higher energy at a rate of 49 +/- 1 meV/GPa, whereas in g-BN the pressure dependence of the band gap was -36 +/- 1 meV/GPa. The results are compared with existing first-principles calculations. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：887 / 894

页数：8

共 67 条

[1] ELECTRONIC-STRUCTURE OF GRAPHITE - EFFECT OF HYDROSTATIC-PRESSURE [J].