Transition from continuous to lateral growth for Ge crystal in undercooled Ge74Ni26 alloy melts

被引:27
作者
Liu, RP [1 ]
Wang, WK
Li, D
Herlach, DM
机构
[1] Yanshan Univ, Mat Sci & Chem Engn Inst, Qinhuangdao 066004, Hebei, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] DLR, German Aerosp Ctr, Inst Space Simulat, D-51170 Cologne, Germany
基金
中国国家自然科学基金;
关键词
nucleation; growth; rapid solidification; semiconductors; sputtering; microstructure;
D O I
10.1016/S1359-6462(99)00218-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Through introducing Si clusters onto an undercooled Ge74Ni26 alloy droplet, which was undercooled in B2O3 flux, the free growth of a Ge crystal was realized from the surface to the center of the sample. The faceted to non-faceted transition occurred with increasing undercooling. Furthermore, the non-faceted dendrites could be changed back into faceted structure when the transient undercooling was lower than a certain value. Combining the results of pure Ge and Ge-Sn and Ge-Si dilute alloys with that of Ge74Ni26, the faceted to non-faceted transition was a general effect of undercooling for these systems and the critical undercooling for the growth mode transition was decreased with the addition of solutes.
引用
收藏
页码:855 / 860
页数:6
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