High resolution electron beam lithography studies on Shipley chemically amplified DUV resists

被引：28

作者：

Macintyre, D

Thoms, S

机构：

[1] Nanoelectronics Research Centre, Dept. of Electronics and Elec. Eng., University of Glasgow

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(96)00083-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 mu C/cm(2) and a beam voltage of 50 kV. UVN is a negative resist with a sensitivity of 20 mu C/cm(2) at 50 kV which gives much poorer dimensional control and has an ultimate resolution of 70 nm isolated lines or 140 nm lines and spaces.

引用

页码：213 / 216

页数：4