Facile fabrication of an efficient BiVO4 thin film electrode for water splitting under visible light irradiation

被引:279
作者
Jia, Qingxin [1 ]
Iwashina, Katsuya [1 ]
Kudo, Akihiko [1 ,2 ]
机构
[1] Tokyo Univ Sci, Fac Sci, Dept Appl Chem, Shinjuku Ku, Tokyo 1628601, Japan
[2] Tokyo Univ Sci, Res Inst Sci & Technol, Div Photocatalyst Energy & Environm, Yamazaki, Chiba 2788510, Japan
关键词
hydrogen production; solar energy conversion; visible light response; SCANNING ELECTROCHEMICAL MICROSCOPY; OXYGEN-EVOLVING CATALYST; PHOTOELECTROCHEMICAL DECOMPOSITION; BISMUTH VANADATE; OXIDATION; PHOTOCATALYST; PHOTOOXIDATION; PHOTOANODE; PHOSPHATE; CRYSTAL;
D O I
10.1073/pnas.1204623109
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
An efficient BiVO4 thin film electrode for overall water splitting was prepared by dipping an F-doped SnO2 (FTO) substrate electrode in an aqueous nitric acid solution of Bi(NO3)(3) and NH4VO3, and subsequently calcining it. X-ray diffraction of the BiVO4 thin film revealed that a photocatalytically active phase of scheelite-monoclinic BiVO4 was obtained. Scanning electron microscopy images showed that the surface of an FTO substrate was uniformly coated with the BiVO4 film with 300-400 nm of the thickness. The BiVO4 thin film electrode gave an excellent anodic photocurrent with 73% of an IPCE at 420 nm at 1.0 V vs. Ag/AgCl. Modification with CoO on the BiVO4 electrode improved the photoelectrochemical property. A photoelectrochemical cell consisting of the BiVO4 thin film electrode with and without CoO, and a Pt counter electrode was constructed for water splitting under visible light irradiation and simulated sunlight irradiation. Photocurrent due to water splitting to form H-2 and O-2 was confirmed with applying an external bias smaller than 1.23 V that is a theoretical voltage for electrolysis of water. Water splitting without applying external bias under visible light irradiation was demonstrated using a SrTiO3:Rh photocathode and the BiVO4 photoanode.
引用
收藏
页码:11564 / 11569
页数:6
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