共 56 条
Facile fabrication of an efficient BiVO4 thin film electrode for water splitting under visible light irradiation
被引:279
作者:
Jia, Qingxin
[1
]
Iwashina, Katsuya
[1
]
Kudo, Akihiko
[1
,2
]
机构:
[1] Tokyo Univ Sci, Fac Sci, Dept Appl Chem, Shinjuku Ku, Tokyo 1628601, Japan
[2] Tokyo Univ Sci, Res Inst Sci & Technol, Div Photocatalyst Energy & Environm, Yamazaki, Chiba 2788510, Japan
来源:
关键词:
hydrogen production;
solar energy conversion;
visible light response;
SCANNING ELECTROCHEMICAL MICROSCOPY;
OXYGEN-EVOLVING CATALYST;
PHOTOELECTROCHEMICAL DECOMPOSITION;
BISMUTH VANADATE;
OXIDATION;
PHOTOCATALYST;
PHOTOOXIDATION;
PHOTOANODE;
PHOSPHATE;
CRYSTAL;
D O I:
10.1073/pnas.1204623109
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
An efficient BiVO4 thin film electrode for overall water splitting was prepared by dipping an F-doped SnO2 (FTO) substrate electrode in an aqueous nitric acid solution of Bi(NO3)(3) and NH4VO3, and subsequently calcining it. X-ray diffraction of the BiVO4 thin film revealed that a photocatalytically active phase of scheelite-monoclinic BiVO4 was obtained. Scanning electron microscopy images showed that the surface of an FTO substrate was uniformly coated with the BiVO4 film with 300-400 nm of the thickness. The BiVO4 thin film electrode gave an excellent anodic photocurrent with 73% of an IPCE at 420 nm at 1.0 V vs. Ag/AgCl. Modification with CoO on the BiVO4 electrode improved the photoelectrochemical property. A photoelectrochemical cell consisting of the BiVO4 thin film electrode with and without CoO, and a Pt counter electrode was constructed for water splitting under visible light irradiation and simulated sunlight irradiation. Photocurrent due to water splitting to form H-2 and O-2 was confirmed with applying an external bias smaller than 1.23 V that is a theoretical voltage for electrolysis of water. Water splitting without applying external bias under visible light irradiation was demonstrated using a SrTiO3:Rh photocathode and the BiVO4 photoanode.
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页码:11564 / 11569
页数:6
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