Properties of ferromagnetic III-V semiconductors

被引：794

作者：

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Lab Elect Intelligent Syst, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 200卷 / 1-3期

关键词：

semiconductors; -; ferromagnetic; alloys; heterostructures;

D O I：

10.1016/S0304-8853(99)00444-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This review covers the experimental and theoretical results on III-V-based ferromagnetic semiconductors ((In,Mn)As and (Ga,Mn)As) accumulated to date. It was found in 1989 that low-temperature molecular beam epitaxy allows one to dope InAs. and later GaAs, with magnetic element Mn over its solubility limit, making it possible to realize an alloy of III-Vs and magnetic elements. Ferromagnetism in such alloys was discovered in (In,Mn)As and later in (Ga,Mn)As. Since ferromagnetic III-Vs can readily be incorporated in the existing semiconductor heterostructure systems, where a number of optical and electronic devices have been realized, they allow us to explore physics and application of previously not available combinations of quantum structures and magnetism in semiconductors. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：110 / 129

页数：20

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