Spin polarization contrast observed in GaAs by force-detected nuclear magnetic resonance

被引：20

作者：

Thurber, KR ^{[1
]}

Harrell, LE

Fainchtein, R

Smith, DD

机构：

[1] USA, Res Lab, AMSRL SE EM, Adelphi, MD 20783 USA

[2] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA

[3] US Mil Acad, Dept Phys, W Point, NY 10996 USA

[4] Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 10期

关键词：

Electron spin polarization - Magnetic resonance force microscopy - Nuclear spins - Nuclear-spin polarization - Nuclear-spin-lattice relaxation - Spintronic device;

D O I：

10.1063/1.1458688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We applied the technique of force-detected nuclear magnetic resonance to observe Ga-71, Ga-69, and As-75 in GaAs. The nuclear spin-lattice relaxation time is 21+/-5 min for Ga-69 at similar to5 K and 4.6 T. We have exploited this long relaxation time to first create and then observe spatially varying nuclear spin polarization within the sample, demonstrating a form of contrast for magnetic resonance force microscopy. Such nuclear spin contrast could be used to indirectly image electron spin polarization in GaAs-based spintronic devices. (C) 2002 American Institute of Physics.

引用

页码：1794 / 1796

页数：3

共 20 条

[1] Meet the spin doctors . . . [J].