Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique

被引：3

作者：

Cai, LC ^{[1
]}

Chen, H ^{[1
]}

Bao, CL ^{[1
]}

Huang, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE | 2004年 / 39卷 / 07期

关键词：

D O I：

10.1023/B:JMSC.0000020047.61719.50

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique are discussed. Hall effect measurements are used for the purpose. A two-layer mode has been applied to account for the doping effect on the Hall mobility in the InAs epilayers. The electron mobility and carrier concentration at 300 and 77 K reaches saturation for thickness of undoped InAs layers greater than 70 nm.

引用

页码：2637 / 2640

页数：4

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