A path to nanolithography

被引：50

作者：

Cerrina, F

Marrian, C

机构：

[1] Dept. of Elec. and Comp. Engineering, University of Wisconsin, Madison, WI, United States

[2] Center for X-ray Lithography, SEMATECH Ctr. Excellence X-ray L.

[3] University of Rome, Italy

[4] University of Wisconsin

来源：

关键词：

D O I：

10.1557/S0883769400032127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：56 / 62

页数：7

共 24 条

[1] FABRICATION OF NANOMETER-SCALE SIDE-GATED SILICON FIELD-EFFECT TRANSISTORS WITH AN ATOMIC-FORCE MICROSCOPE
CAMPBELL, PM
SNOW, ES
MCMARR, PJ
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1388 - 1390
[2] CERRINA F, UNPUB
[3] CERRINA F, 1995, MAT RES SOC S P, V380
[4] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[5] CHEN A, 1995, SPIE, V12, P2437
[6] CUMMING S, 1996, APPL PHYS LETT, V68, P322
[7] FABRICATION AND TRANSPORT MEASUREMENTS OF ATOMIC-FORCE MICROSCOPE MODIFIED SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
FAYFIELD, T
HIGMAN, TK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 1285 - 1289
[8] SPATIAL-PHASE-LOCKED ELECTRON-BEAM LITHOGRAPHY - INITIAL TEST-RESULTS
FERRERA, J
WONG, VV
RISHTON, S
BOEGLI, V
ANDERSON, EH
KERN, DP
SMITH, HI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2342 - 2345
[9] GENTILI M, 1994, J VAC SCI TECHNOL B, V12
[10] EXPERIMENTAL AND THEORETICAL-STUDY OF IMAGE BIAS IN X-RAY-LITHOGRAPHY
GUO, JZY
LEONARD, Q
CERRINA, F
DIFABRIZIO, E
LUCIANI, L
GENTILI, M
GEROLD, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 3150 - 3154