Modeling hole and electron mobilities in pentacene ab-plane

被引：62

作者：

Yin, Shiwei ^{[1
]}

Lv, Yanfeng ^{[1
]}

机构：

[1] Shaanxi Normal Univ, Sch Chem & Mat Sci, Key Lab Macromol Sci Shaanxi Prov, Xian 710062, Peoples R China

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期

关键词：

charge-carrier mobility; pentacene; master equation;

D O I：

10.1016/j.orgel.2008.06.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The master equation coupled with the Marcus-Hush electron transfer theory is applied to solve the charge-carrier mobility in pentacene ab-plane. The two-dimension mobilities of hole and electron-carriers are calculated by numerical method. The calculated intrinsic mobilities for hole and electron-carriers are same order of magnitude. The field induced anisotropic hole-carrier mobilities basically agree with Lee et al. experimental results [J.Y. Lee, S. Roth, Y.W. Park, Appl. Phys. Lett. 88 (2006) 252106]. The direction of the highest hole-carrier mobility is clearly assigned. The influences of electric field and carrier density on the mobility are also investigated. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：852 / 858

页数：7

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