Geometry and core-level shifts of As on GaAs(110)

被引：6

作者：

Cho, JH

Zhang, ZY

Lee, SH

Kang, MH

机构：

[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.59.12200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic structure of the As-covered GaAs(110) surface in one-monolayer coverage is studied using the pseudopotential density-functional theory. We compare the adsorption geometry of As/GaAs(110) with that of the well-studied isoelectronic Sb/GaAs(110) system and discuss the large difference in the desorption temperature found in both systems, based on the calculated adsorption energies. In addition, we calculate the As 3d and Ga 3d core-level shifts at As/GaAs(110) using: initial-state theory. Our calculations not only produce well the surface components resolved in a recent photoemission experiment, but predict an additional surface core level for the substrate As atom bonded to the adsorbed As atom. [S0163-1829(99)02219-5].

引用

页码：12200 / 12203

页数：4

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