Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions

被引：22

作者：

Brown, TM ^{[1
]}

Bittencourt, C ^{[1
]}

Sebastiani, M ^{[1
]}

Evangelisti, F ^{[1
]}

机构：

[1] UNIV ROMA 3, IST NAZL FIS MAT, I-00146 ROME, ITALY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.55.9904

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterostructures formed by depositing in situ amorphous hydrogenated silicon-carbon alloys on Si(100) substrates were characterized by photoelectric-yield spectroscopy, UPS, and XPS. It is shown that both substrate and overlayer valence-band tops can be identified on the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence-band discontinuity varying from 0.44 eV to 1.00 eV for carbon content ranging from 0 to 50%. The present data can be used as a test for the lineup theories and strongly support the interface dipole models.

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收藏

页码：9904 / 9909

页数：6

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