Crystal nucleation in glasses of phase change memory

被引：31

作者：

Karpov, V. G. ^{[1
]}

Kryukov, Y. A. ^{[1
]}

Mitra, M. ^{[2
]}

Karpov, I. V. ^{[2
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

[2] Intel Corp, Santa Clara, CA 95052 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 05期

关键词：

D O I：

10.1063/1.2973686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a theory of field induced crystal nucleation in disordered glass structure applicable to chalcogenide phase change memory. In the region of symmetry breaking strong electric fields, the nucleation is dominated by cylinder shaped particles with bias dependent nucleation barriers. Statistical fluctuations in microscopic structure of a glass translate into probabilistic distributions of induction times and threshold voltages having respectively log-normal and normal shape. These distributions are exponentially sensitive to the applied voltage, temperature, and material parameters. (C) 2008 American Institute of Physics.

引用

页数：8

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