Catalyst-free growth of GaN nanowires

被引：88

作者：

Bertness, KA ^{[1
]}

Sanford, NA

Barker, JM

Schlager, JB

Roshko, A

Davydov, AV

Levin, I

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2006年 / 35卷 / 04期

关键词：

gallium nitride; molecular beam epitaxy (MBE); nanostructures; nanotechnology;

D O I：

10.1007/s11664-006-0102-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown GaN and AlGaN nanowires on Si (111) substrates with gas-source molecular beam epitaxy (MBE). No metal catalysts were used. The nanowires displayed a number of interesting materials properties, including room-temperature luminescence intensity greater than that of free-standing HYPE-grown GaN, relaxed lattice parameters, and the tendency of nanowires dispersed in solvents to align in response to electric fields. The wires were well separated, 50-250 nm in diameter, and grew to lengths ranging from 2 mu m to 7 mu m. Transmission electron microscopy indicated that the wires were free of defects, unlike the surrounding matrix layer.

引用

收藏

页码：576 / 580

页数：5

相关论文

共 16 条

[1] Spontaneously grown GaN and AlGaN nanowires [J].

Bertness, KA ;

Roshko, A ;

Sanford, NA ;

Barker, JM ;

Davydov, A .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :522-527

[2] Size-dependent photoconductivity in MBE-grown GaN-nanowires [J].

Calarco, R ;

Marso, M ;

Richter, T ;

Aykanat, AI ;

Meijers, R ;

Hart, AV ;

Stoica, T ;

Luth, H .

NANO LETTERS, 2005, 5 (05) :981-984

[3] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy [J].

Calleja, E ;

Sánchez-García, MA ;

Sánchez, FJ ;

Calle, F ;

Naranjo, FB ;

Muñoz, E ;

Jahn, U ;

Ploog, K .

PHYSICAL REVIEW B, 2000, 62 (24) :16826-16834

[4] Single gallium nitride nanowire lasers [J].

Johnson, JC ;

Choi, HJ ;

Knutsen, KP ;

Schaller, RD ;

Yang, PD ;

Saykally, RJ .

NATURE MATERIALS, 2002, 1 (02) :106-110

[5] InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111)Si substrate [J].

Kikuchi, A ;

Kawai, M ;

Tada, M ;

Kishino, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (12A) :L1524-L1526

[6] Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy [J].

Kim, YH ;

Lee, JY ;

Lee, SH ;

Oh, JE ;

Lee, HS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (08) :1635-1639

[7] Atomic arrangement at the AlN/Si(111) interface [J].

Liu, R ;

Ponce, FA ;

Dadgar, A ;

Krost, A .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :860-862

[8] High-performance nanowire electronics and photonics on glass and plastic substrates [J].

McAlpine, MC ;

Friedman, RS ;

Jin, S ;

Lin, KH ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (11) :1531-1535

[9] Free-standing GaN substrates by hydride vapor phase epitaxy [J].

Park, SS ;

Park, IW ;

Choh, SH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B) :L1141-L1142

[10] Bulk and homoepitaxial GaN-growth and characterisation [J].

Porowski, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :153-158