The effect of doping on X-ray response of TIBr crystals

被引：2

作者：

Dmitriev, Yuri ^{[1
]}

Cirignano, Leonard J. ^{[1
]}

Shah, Kanai S. ^{[1
]}

机构：

[1] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2008年 / 594卷 / 02期

关键词：

doping; induced mobility; thallium bromide crystals; X-ray irradiation;

D O I：

10.1016/j.nima.2008.06.020

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The response of TlBr crystals (both undoped and doped with either ln(1+) or Pb2+) to X-ray radiation was studied. It was experimentally observed that the response of TlBr, TlBr:Pb2+ and TlBr:ln(1+) crystals to X-ray irradiation strongly depends on the polarity of irradiated contact. A simple model based on X-ray and charge carriers' interaction qualitatively explained the effect. The Tl1+ ions' X-ray-induced mobility of 6.6 x 10(-14) cm(2)/V s and diffusion coefficient of 1.7 x 10(-15) cm(2)/s at room temperature were estimated from X-ray-induced current-time measurements of TlBr and TlBr:Pb2+ crystals using suggested model. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：206 / 209

页数：4

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