Site-selectivity of 3d metal cation dopants and dielectric response in calcium copper titanate

被引:46
作者
Chung, SY [1 ]
Choi, SY
Yamamoto, T
Ikuhara, Y
Kang, SJL
机构
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
[2] Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan
[3] Univ Tokyo, Dept Adv Mat Sci, Tokyo 1138656, Japan
[4] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2179110
中图分类号
O59 [应用物理学];
学科分类号
摘要
By doping a few atomic percent of 3d-block cations, we demonstrate that the high dielectric response in CaCu3Ti4O12 can be reduced by a factor of similar to 10(3) at room temperature. Each of the added dopants shows its own preferential substitution on either Cu or Ti sites. The dopants that act as acceptors have a critical impact on the disappearance of the electrostatic potential barrier at grain boundaries, resulting in drastically decreased permittivity values of < 90 without voltage dependence. The present doping experiment directly shows that the potential barrier at internal interfaces is a key factor for the peculiar dielectric phenomena.(c) 2006 American Institute of Physics.
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