First-principles calculations of strontium on Si(001) -: art. no. 075309

被引:60
作者
Ashman, CR
Först, CJ
Schwarz, K
Blöchl, PE
机构
[1] Tech Univ Clausthal, Inst Theoret Phys, D-38678 Clausthal Zellerfeld, Germany
[2] Vienna Univ Technol, Inst Mat Chem, A-1060 Vienna, Austria
来源
PHYSICAL REVIEW B | 2004年 / 69卷 / 07期
关键词
D O I
10.1103/PhysRevB.69.075309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reports state-of-the-art electronic structure calculations on the deposition of strontium on the technologically relevant, (001) orientated silicon surface. We identified the surface reconstructions from 0-4/3 monolayers and relate them to experimentally reported data. A phase diagram is proposed. We predict phases at 1/6, 1/4, 1/2, 2/3, and 1 monolayers. Our results are expected to provide valuable information in order to understand heteroepitaxial growth of a prominent class of high-K oxides around SrTiO3. The insight obtained for strontium is expected to be transferable to other alkaline-earth metals.
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页数:13
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