Source of 1/f noise in carbon nanotube devices

被引:27
作者
Briman, Mikhail
Bradley, Keith
Gruner, George [1 ]
机构
[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA
[2] Nanomix Inc, Emeryville, CA 94608 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2210570
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the observation of 1/f noise in carbon nanotube field-effect transistors as a function of gate potential. In order to avoid additional low frequency noise contribution from SiO2-nanotube interactions, the measurements were carried out in conducting liquid. Based on the experimental results, we conclude that the number of carrier fluctuations is the source of the 1/f noise. (c) 2006 American Institute of Physics.
引用
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页数:5
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