Indium diffusion in n-type gallium arsenide

被引：11

作者：

Li, WM ^{[1
]}

Cohen, RM ^{[1
]}

Simons, DS ^{[1
]}

Chi, PH ^{[1
]}

机构：

[1] NIST,CHEM SCI & TECHNOL LAB,GAITHERSBURG,MD 20899

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diffusion of indium markers at T=900 degrees C have been measured in undoped and Te-doped GaAs epilayers grown by organometallic vapor phase epitaxy. The diffusivity was found to be a linear function of electron concentration over the range n=2x10(17)-1.5x10(19) cm(-3). The results are consistent with the interdiffusion of AlAs-GaAs superlattices, and the diffusivities of In and Al in GaAs at 900 degrees C are found to be essentially identical within experimental noise. The results strongly suggest that group III interdiffusion in GaAs is controlled by a Ga vacancy with a charge of -1. (C) 1997 American Institute of Physics.

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页码：3392 / 3394

页数：3

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