Vacuum electron field emission from SnO2 nanowhiskers annealed in N2 and O2 atmospheres -: art. no. 013109

被引:32
作者
Luo, SH
Chu, PK
Di, ZF
Zhang, M
Liu, WL
Lin, CL
Fan, JY
Wu, XL
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Sahnghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn, Shanghai 200050, Peoples R China
[3] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[4] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
关键词
D O I
10.1063/1.2161573
中图分类号
O59 [应用物理学];
学科分类号
摘要
The field emission properties of SnO2 nanowhiskers were observed to change after annealing under O-2 and N-2. The electron current increased significantly from the sample annealed in N-2 and the threshold field decreased from 3.17 V/mu m of the as-grown sample to 2.59 V/mu m of the annealed sample. The mechanism of the field emission enhancement was explored using Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy (XPS). The results reveal that after annealing in N-2, the amount of Sn-O bonds decreased and N atoms were introduced onto the surface. The binding energies of Sn 3d and O 1s determined by high resolution XPS analysis show a shift of 0.55 and 0.47 eV, respectively, toward the high energy side. This shows that the electron emission enhancement arises from a decrease in the work function. The changes in the field emission effect from the sample annealed in O-2 are different and a possible mechanism is also proposed. (c) 2006 American Institute of Physics.
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页数:3
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