Mechanistic studies of silicon oxidation

被引:50
作者
Weldon, MK [1 ]
Queeney, KT [1 ]
Chabal, YJ [1 ]
Stefanov, BB [1 ]
Raghavachari, K [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期
关键词
D O I
10.1116/1.590829
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The microscopic mechanism of the formation of ultrathin oxides on Si(100) has been investigated using a combination of infrared spectroscopy and ab initio quantum chemical cluster calculations. The 0-->2 monolayer oxide films are grown sequentially from the "bottom-up" using repeated water exposures and annealing cycles, with the partial pressure of water ranging from 10(-10) to 10 Torr. The resultant films were then compared to the equivalent thicknesses of thermal and native oxide films. In this way, we obtain unprecedented insight into the essential chemical structures formed during the initial oxidation and subsequent layer growth of these technologically relevant films. (C) 1999 American Vacuum Society. [S0734-211X(99)02804-8].
引用
收藏
页码:1795 / 1802
页数:8
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