Carrier mobility in nonstoichiometric n-Bi2Te3-xSex solid solutions

被引：13

作者：

Kutasov, VA

Lukyanova, LN

Konstantinov, PP

Alekseeva, GT

机构：

[1] A. F. Ioffe Physicotechnical Inst., Russian Academy of Sciences

来源：

PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 03期

关键词：

Spectroscopy; State Physics; Solid Solution; Conduction Band; Carrier Concentration;

D O I：

10.1134/1.1130144

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study has been made of the thermoelectric and galvanomagnetic properties of n-Bi2Te3-xSex solid solutions (x = 0.3 and 0.36) in the temperature range 80-300 K. The lowest carrier concentrations, (0.8-1) x 10(18) cm(-3), were obtained by displacing the solid solution from the stoichiometric to a Te-rich composition. At such carrier concentrations, the second subband in the conduction band of n-Bi2Te3-xSex is not filled, which results in a growth of mobility because of the absence of interband scattering, and brings about an increase of thermoelectric efficiency in the 80-120 K range. (C) 1997 American Institute of Physics.

引用

页码：419 / 422

页数：4

共 13 条

[1]

ALEKSEEVA GT, 1991, SOV PHYS-SOLID STATE, V33, P1988

[2]

BECKMAN O, 1965, ARK FYS, V28, P215

[3] ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].