Giant magneto resistance in semiconducting DyNiBi

被引：12

作者：

Casper, Frederick ^{[1
]}

Felser, Claudia ^{[1
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Anorgan & Analyt Chem, D-55099 Mainz, Germany

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 148卷 / 5-6期

关键词：

Half-Heusler compounds; Semiconductors; Impurities in semiconductors; Giant magnetoresistance;

D O I：

10.1016/j.ssc.2008.08.027

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The semiconducting half-Heulser compound DyNiBi shows a negative giant magneto resistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：175 / 177

页数：3

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