Trap effects studies in GaN MESFETs by pulsed measurements

被引：66

作者：

Trassaert, S

Boudart, B

Gaquière, C

Théron, D

Crosnier, Y

Huet, F

Poisson, MA

机构：

[1] Univ Sci & Tech Lille Flandres Artois, IEMN, UMR CNRS 8520, F-59652 Villeneuve Dascq, France

[2] Thomson CSF, LCR, F-91404 Orsay, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 16期

关键词：

D O I：

10.1049/el:19990887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Static and pulsed measurements have been performed on GaN MESFETs. The existence of electrical traps associated with the surface stares has been demonstrated. These traps can be activated by light or temperature. Hyper-frequency pulsed measurements performed at 3GHz have shown that the maximum stable gain increases with temperature.

引用

页码：1386 / 1388

页数：3

共 7 条

[1] Nitride based high power devices: Design and fabrication issues [J].