Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode

被引：21

作者：

Shin, Dongguen ^{[1
]}

Lee, Jeihyun ^{[1
]}

Park, Soohyung ^{[1
]}

Jeong, Junkyeong ^{[1
]}

Seo, Ki-Won ^{[2
]}

Kim, Hyo-Joong ^{[2
]}

Kim, Han-Ki ^{[2
]}

Choi, Min-Jun ^{[3
]}

Chung, Kwun-Bum ^{[3
]}

Yi, Yeonjin ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi, South Korea

[3] Dongguk Univ, Div Phys & Semicond Sci, Seoul 100715, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

SOLAR-CELLS; TIN-OXIDE; ULTRAVIOLET-OZONE; TRANSPARENT; PERFORMANCE; EFFICIENCY; FILMS; CONTACT; SURFACE;

D O I：

10.7567/APEX.8.095701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interfacial energy level alignments between poly(thieno[3,4-b]-thiophene)-co-benzodithiophene (PTB7) and indium zinc oxide (IZO) were investigated. In situ ultraviolet photoemission spectroscopy measurements were conducted with the step-by-step deposition of PTB7 on IZO substrate. All spectral changes were analyzed between each deposition step, and interfacial energy level alignments were estimated. The hole barrier of standard ultraviolet-ozone treated IZO is 0.58 eV, which is lower than the value of 1.09 eV obtained for bare IZO. The effect of barrier reduction on the hole transport was also confirmed with electrical measurements of hole-dominated devices. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

共 35 条

[1] Transparent, low resistance, and flexible amorphous ZnO-doped In2O3 anode grown on a PES substrate [J].