Optical and electronic properties of conductive ternary nitrides with rare-or alkaline-earth elements

被引:21
作者
Kassavetis, S. [1 ]
Hodroj, A. [2 ]
Metaxa, C. [1 ]
Logothetidis, S. [1 ]
Pierson, J. F. [2 ]
Patsalas, P. [1 ]
机构
[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece
[2] Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, Parc Saurupt, F-54011 Nancy, France
关键词
TITANIUM NITRIDE; FILMS; COATINGS; MICROSTRUCTURE; PERFORMANCE; ABSORBER; TIN;
D O I
10.1063/1.4971407
中图分类号
O59 [应用物理学];
学科分类号
摘要
Conductive nitrides, such as TiN, are key engineering materials for electronics, photonics, and plasmonics; one of the essential issues for such applications is the ability of tuning the conduction electron density, the resistivity, and the electron scattering. While enhancing the conduction electron density and blueshifting the intraband absorption towards the UV were easily achieved previously, reducing the conduction electron density and redshifting the intraband absorption into the infrared are still an open issue. The latter is achieved in this work by alloying TiN by rare earth (RE = Sc, Y, La) or alkaline earth (AE = Mg, Ca) atoms in Ti substitutional positions. The produced TixRE1-xN and Ti(x)AE(1-x)N thin film samples were grown by a hybrid arc evaporation/sputtering process, and most of them are stable in the B1 cubic structure. Their optical properties were studied in an extensive spectral range by spectroscopic ellipsometry. The ellipsometric spectra were analyzed and quantified by the Drude-Lorentz model, which provided the conduction electron density, the electron mean free path, and the resistivity. The observed interband transitions are firmly assigned, and the optical and electrical properties of TixRE1-xN and Ti(x)AE(1-x)N are quantitatively correlated with their composition and crystal structure. Published by AIP Publishing.
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页数:10
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共 59 条
[1]   Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy [J].
Al-Brithen, HA ;
Smith, AR ;
Gall, D .
PHYSICAL REVIEW B, 2004, 70 (04) :045303-1
[2]   Spectroscopic ellipsometric characterization of TiAlN/TiAlON/Si3N4 tandem absorber for solar selective applications [J].
Biswas, A. ;
Bhattacharyya, D. ;
Barshilia, H. C. ;
Selvakumar, N. ;
Rajam, K. S. .
APPLIED SURFACE SCIENCE, 2008, 254 (06) :1694-1699
[3]   Microstructure and chemical state of Ti1-xYxN film deposited by reactive magnetron sputtering [J].
Choi, WS ;
Hwang, SK ;
Lee, CM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (06) :2914-2921
[4]   Performance of hard coatings, made by balanced and unbalanced magnetron sputtering, for decorative applications [J].
Constantin, R ;
Miremad, B .
SURFACE & COATINGS TECHNOLOGY, 1999, 120 :728-733
[5]   Optical properties and plasmon resonances of titanium nitride nanostructures [J].
Cortie, M. B. ;
Giddings, J. ;
Dowd, A. .
NANOTECHNOLOGY, 2010, 21 (11)
[6]   Yttrium nitride thin films grown by reactive laser ablation [J].
De La Cruz, W ;
Díaz, JA ;
Mancera, L ;
Takeuchi, N ;
Soto, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (11) :2273-2279
[7]   USE OF THE VOIGT FUNCTION IN A SINGLE-LINE METHOD FOR THE ANALYSIS OF X-RAY-DIFFRACTION LINE BROADENING [J].
DEKEIJSER, TH ;
LANGFORD, JI ;
MITTEMEIJER, EJ ;
VOGELS, ABP .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1982, 15 (JUN) :308-314
[8]   Optical and transport measurement and first-principles determination of the ScN band gap [J].
Deng, Ruopeng ;
Ozsdolay, B. D. ;
Zheng, P. Y. ;
Khare, S. V. ;
Gall, D. .
PHYSICAL REVIEW B, 2015, 91 (04)
[9]   Optimization design of Ti0.5Al0.5N/Ti0.25Al0.75N/AlN coating used for solar selective applications [J].
Du, Miao ;
Hao, Lei ;
Mi, Jing ;
Lv, Fang ;
Liu, Xiaopeng ;
Jiang, Lijun ;
Wang, Shumao .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (04) :1193-1196
[10]   Different evolutionary pathways from B4 to B1 phase in AlN and InN: metadynamics investigations [J].
Duan, Yifeng ;
Qin, Lixia ;
Liu, Hanyu .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (20)