Study on Transport Properties of Bi2Se3 Single Crystals Grown by Vapor Phase Technique

被引：1

作者：

Deshpande, M. P. ^{[1
]}

Chaki, Sunil H. ^{[1
]}

Pandya, Nilesh N. ^{[1
]}

Sakariya, Pallavi ^{[1
]}

Bhatt, Sandip V. ^{[1
]}

机构：

[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

来源：

SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY | 2012年 / 42卷 / 10期

关键词：

Bi2Se3; electrical properties; single crystal; vapor phase technique; THERMOELECTRIC PROPERTIES; OPTICAL-PROPERTIES; THIN-FILMS; SB2SE3; POWER; BAND;

D O I：

10.1080/15533174.2012.682683

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Single crystals of Bi2Se3 were grown by vapor phase technique using ammonium chloride (NH4Cl) as a transporting agent. The stoichiometry of the as-grown Bi2Se3 crystal was confirmed by energy-dispersive analysis of X-ray. The lattice parameters, crystallite size, and stacking fault probabilities were determined from X-ray powder diffractogram. The surface morphology of the as-grown single crystals was studied using AFM image. The Seebeck coefficient and resistivity variation from low (6 K) to near ambient temperature on these as-grown Bi2Se3 single crystals was measured. The Hall effect measurements were carried out at three different low temperatures. The obtained results are discussed in detail.

引用

页码：1418 / 1425

页数：8

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