Scanning force microscopy of domain structures in Pb(Zn1/3Nb2/3)O3-8% PbTiO3 and Pb(Mg1/3Nb2/3)O3-29% PbTiO3

被引:81
作者
Abplanalp, M [1 ]
Barosová, D
Bridenbaugh, P
Erhart, J
Fousek, J
Günter, P
Nosek, J
Sulc, M
机构
[1] ETH Honggerberg, Inst Quantum Elect, Nonlinear Opt Lab, CH-8093 Zurich, Switzerland
[2] Tech Univ Liberec, Dept Phys, CZ-46117 Liberec, Czech Republic
[3] Crystal Associates Inc, E Hanover, NJ 07936 USA
[4] Tech Univ Liberec, Int Ctr Piezpelect Res, CZ-46117 Liberec, Czech Republic
关键词
D O I
10.1063/1.1446655
中图分类号
O59 [应用物理学];
学科分类号
摘要
Domain structures of unpoled as well as poled (along [001]- and [110]-direction) Pb(Zn1/3Nb2/3)O-3 (PZN)-8% PbTiO3 (PT) and Pb(Mg1/3Nb2/3)O-3 (PMN)-29% PT single crystals have been investigated by scanning force microscopy (SFM) in the piezoresponse mode, at room temperature. Antiparallel domain structures have been detected mostly in unpoled crystals of both materials, with a fingerprint pattern in (001)-oriented PZN-8% PT crystal. The ferroelastic domain wall has been identified in poled (110)-oriented PZN-8% PT crystal. "Writing" of ferroelectric domains has been performed by applying a dc voltage to the SFM tip. Local re-poling has been observed for all unpoled as well as for poled (001)-oriented crystals at the voltage +/-60 V. Local electrical switching was successful in poled (110)-oriented PMN-29% PT at higher voltage (+/-120 V) but was not successful in poled (110)-oriented PZN-8% PT crystal. Domain-engineered crystals poled in [110]-direction seem to exhibit more stable (in the sense of local re-poling properties) domain arrangement. Hysteretic d(E) dependencies were observed by local application of an ac voltage. (C) 2002 American Institute of Physics.
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页码:3797 / 3805
页数:9
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