Raman investigation of InSe doped with GaS

被引：14

作者：

Zolfaghari, M

Jain, KP

Mavi, HS

Balkanski, M

Julien, C

Chevy, A

机构：

[1] UNIV PARIS 06,CNRS,URA 154,PHYS SOLIDES LAB,F-75252 PARIS,FRANCE

[2] UNIV PARIS 06,CNRS,URA 782,LAB PHYS MILLEUX,F-75252 PARIS,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 38卷 / 1-2期

关键词：

resonant Raman scattering; layer structure; indium selenide;

D O I：

10.1016/0921-5107(95)01375-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Raman spectrum of InSe doped with GaS exhibits appreciable changes at low doping densities indicating considerable changes on introducing GaS. The photoluminescence as well as resonance Raman study shows that the exciton energy is shifted towards higher energy as a result of doping. At resonance, both the one- and two-phonon polar modes are observed, although considerably broadened. This indicates that the GaS-doped InSe develops significant topological disorder. Resonance Raman study shows that increasing the dopant broadens the resonance but the excitonic energy does not change as a result of the increase in the GaS in InSe. The scattering also exhibits considerable temperature dependence, so that it is possible to temperature tune the resonance in the doped samples at low temperatures.

引用

页码：161 / 170

页数：10

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