Electrical and dielectric properties in double doped BaTiO3 showing relaxor behavior

被引:14
作者
Kumar, MM [1 ]
Suresh, MB [1 ]
Suryanarayana, SV [1 ]
机构
[1] Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
关键词
D O I
10.1063/1.370939
中图分类号
O59 [应用物理学];
学科分类号
摘要
BaTiO3, when doped with minute concentrations of Bi+3 and Fe+3, was found to exhibit relaxor behavior. The data on dielectric constant performed as a function of frequency and temperature indicate a reduction in the transition temperature with increase in frequency. A poled sample indicated a decrease in the transition temperature compared to an unpoled sample. It was found that the grain boundary capacitance were negligible and the relaxations occurred are only due to the bulk of the sample. The results have been discussed using impedance and modulus spectroscopy. (C) 1999 American Institute of Physics. [S0021-8979(99)00615-5].
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页码:1634 / 1637
页数:4
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