Scanning electron microscopy study of the growth mechanism of biaxially aligned magnesium oxide layers grown by unbalanced magnetron sputtering

被引:36
作者
Ghekiere, P [1 ]
Mahieu, S [1 ]
De Winter, G [1 ]
De Gryse, R [1 ]
Depla, D [1 ]
机构
[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
关键词
MgO; biaxial alignment; unbalanced magnetron sputtering; microstructure; growth mechanism;
D O I
10.1016/j.tsf.2005.07.314
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnesium oxide (MgO) thin films have been grown by unbalanced magnetron sputtering on an inclined non-aligned substrate. This technique provides a way to grow biaxially aligned MgO layers. A preferential [111] out-of-plane orientation and a strong in-plane alignment have been observed. Scanning Electron Microscopy (SEM) was used to investigate the growth mechanism of these biaxially aligned MgO layers and to examine the morphology of the layers, revealing a columnar grain structure and roof-tile surface which is limited by {001} planes. Column bundling and repeated nucleation was observed. Also, the formation of highly disrupted regions caused by local heating of the growing film has been observed. A mechanism to explain the in-plane alignment is proposed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:129 / 134
页数:6
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