Vibrational relaxation rates for H on a Si(100):(2 x 1) surface:: a two-dimensional model

被引：20

作者：

Andrianov, I

Saalfrank, P

机构：

[1] UCL, Christopher Ingold Labs, Dept Chem, London WC1H 0AJ, England

[2] UCL, Christopher Ingold Labs, CTCC, London WC1H 0AJ, England

[3] Univ Regensburg, Inst Phys & Theoret Chem, D-93053 Regensburg, Germany

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 350卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/S0009-2614(01)01304-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The results of calculations based on perturbation theory of vibrational relaxation rates due to coupling to substrate phonons for hydrogen atoms adsorbed on a Si(1 0 0):(2 x 1) surface are presented. For this purpose a two-dimensional model is adopted in which both the H-Si stretching and bending motions are included. It is shown that within this model the multiphonon emission and absorption processes play a negligible role. The calculated lifetimes agree well with available experimental data. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：191 / 197

页数：7

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