Deformation-driven electrical transport in amorphous TiO2 nanotubes

被引：4

作者：

Asthana, A. ^{[1
]}

Shokuhfar, T. ^{[2
]}

Gao, Q. ^{[2
]}

Heiden, P. A. ^{[3
]}

Yassar, R. S. ^{[2
]}

机构：

[1] Michigan Technol Univ, Dept Mat Sci & Engn, Houghton, MI 49931 USA

[2] Michigan Technol Univ, Dept Mech Engn Engn Mech, Houghton, MI 49931 USA

[3] Michigan Technol Univ, Dept Chem, Houghton, MI 49931 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 109卷 / 01期

基金：

美国国家科学基金会;

关键词：

TITANIUM; FILMS; NANOPARTICLES; FABRICATION; ANATASE; ARRAYS;

D O I：

10.1007/s00339-012-7040-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of in situ transmission electron microscopy combined with scanning tunneling microscopy measurements were carried out to investigate the effect of mechanical deformation on the electrical transport properties of amorphous TiO2 nanotubes. Under no mechanical straining, it was found that the TiO2 nanotubes behave as electrical insulators. However, the nanotubes show semiconducting behavior under a highly deformed state. On the basis of a metal-semiconductor-metal model, it was suggested that in-shell defects, surface defect-driven conduction modes, are responsible for the appearance of the semiconducting behavior.

引用

页码：127 / 132

页数：6

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