Solution-Gated Epitaxial Graphene as pH Sensor

被引：629

作者：

Ang, Priscilla Kailian ^{[1
]}

Chen, Wei ^{[2
]}

Wee, Andrew Thye Shen ^{[2
]}

Loh, Kian Ping ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 44期

关键词：

D O I：

10.1021/ja805090z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A solution-gate field effect transistor (SGFET) has been fabricated on few-layer graphene (FLG). The ideally polarizable graphene/aqueous interface allows the capacitive charging of the surface by hydroxyl (OH-) and hydroxonium ions (H3O+). The conductivity versus gate potential curve exhibits ''V'' shaped ambipolar transfer characteristics of graphene, with hole and electron mobilities of 3600 cm(2)/Vs and 2100 cm(2)/Vs, respectively. The shift of the negative gate potential with pH shows a supra-Nernstian response of 99 meV/pH. Our work points to the potential application of graphene in ultrafast and ultralow noise chemical or biological sensors.

引用

页码：14392 / +

页数：3

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