High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation

被引：81

作者：

Choi, R ^{[1
]}

Kang, CS ^{[1
]}

Lee, BH ^{[1
]}

Onishi, K ^{[1
]}

Nieh, R ^{[1
]}

Gopalan, S ^{[1
]}

Dharmarajan, E ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934924

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface preparation technique using NH3 anneal has been investigated to reduce interface reaction and consequently the equivalent oxide thickness (EOT) of hafnium oxide for alternative gate dielectric application. MOSCAPs and MOSFETs were fabricated on the NH3 nitrided substrates with HfO2 dielectric and TaN gate electrode. Using this nitridation technique, EOT of as thin as 7.1Angstrom with 10(-2)A/cm(2) at -1.5V was obtained. Furthermore, excellent device characteristics, and reasonable reliability have been achieved.

引用

页码：15 / 16

页数：2

共 4 条

[1]

Byoung Hun Lee, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P133, DOI 10.1109/IEDM.1999.823863

[2]

Lee BH, 2000, INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, P39

[3]

LEE SJ, 2000, IEDM

[4] Ultra thin high quality Ta2O5 gate dielectric prepared by in-situ rapid thermal processing [J].

Luan, HF ;

Wu, BZ ;

Kang, LG ;

Kim, BY ;

Vrtis, R ;

Roberts, D ;

Kwong, DL .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :609-612

← 1 →