A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor

被引：81

作者：

Gobert, Y

Tasker, PJ

Bachem, KH

机构：

[1] Fraunhofer-Institut Für Angewandte Festkörperphysik

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1997年 / 45卷 / 01期

关键词：

Manuscript received February 14; 1996; revised September 23; 1996. This work was supported by the European Community within the Human Capital and Mobility program. The authors are with the Fraunhofer-Institut für Angewandte Festkörperphysik; D-79108; Freiburg; Germany. Publisher Item Identifier S 0018-9480(97)00281-0;

D O I：

10.1109/22.552048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor (HBT) is proposed. This circuit was established by analyzing in detail the physical operation of the HBT, The model verification was carried out by comparison of the measured and simulated S- and Z-parameters for both passive (reverse-biased) and active bias conditions, A feature of this model is that it uses a direct extraction method to determine the parasitic elements, in particular, the parasitic capacitances, The excellent agreement between the measured and simulated parameters was verified all over the frequency range from 0.23 to 75 GHz.

引用

页码：149 / 153

页数：5