Improvement of stability in ZnO TFT under bias stress

被引：6

作者：

Hwang, Chi-Sun ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Lee, Jeong-IK ^{[1
]}

Chung, Sung Mook ^{[1
]}

Yang, Yong Suk ^{[1
]}

Do, Lee-Mi ^{[1
]}

Chu, Hye Yong ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, IT Convergence & Component Lab, Taejon 305350, South Korea

来源：

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | 2007年 / 38卷

关键词：

D O I：

10.1889/1.2785273

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin flims deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100 degrees C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer.

引用

页码：237 / 240

页数：4