Characterization of Pb(ZrxTi1-x)O-3 thin film on silicon substrate with heteroepitaxial yttria-stabilized zirconia (YSZ) buffer layer

被引：27

作者：

Horita, S

Kawada, T

Abe, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 10B期

关键词：

PZT; YSZ; Si; heteroepitaxy; epitaxy; ferroelectricity; reactive sputtering;

D O I：

10.1143/JJAP.35.L1357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A c-axis highly oriented Pb(ZrxTi1-x)O-3 (PZT) film on Si(100) with a heteroepitaxial yttria-stabilized zirconia (YSZ) buffer layer was obtained by reactive magnetron sputtering. A 10-nm-thick YSZ buffer layer prevented the PZT film from reacting with the Si substrate at the substrate temperature of 650 degrees C, leading to the production of a planar oriented PZT film. Polarization-voltage hysteresis measurements showed that the PZT/YSZ/Si structure had ferroelectric properties. Current-voltage and capacitance-voltage measurements indicated that this structure had crystalline defects which generated large absorption current with short relaxation time constants.

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页码：L1357 / L1359

页数：3

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