Microstructural changes of CdTe during the annealing process

被引：8

作者：

Chapman, AJ ^{[1
]}

Lane, DW

Rogers, KD

Özsan, ME

机构：

[1] Cranfield Univ, RMCS, Dept Mat & Med Sci, Swindon SN6 8LA, Wilts, England

[2] Teksolar Ltd, Woking, Surrey, England

来源：

THIN SOLID FILMS | 2002年 / 403卷

关键词：

sulfur; diffusion; cadmium telluride; cadmium sulfide;

D O I：

10.1016/S0040-6090(01)01547-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Complete thin film solar cells have been fabricated by physical vapour deposition of CdTe onto chemical-bath-deposited CdS supported on a commercial SnO2/glass substrate. Cell I-V characteristics were measured under AM 1.5(G) illumination. Energy dispersive X-ray analysis was used to measure the average stoichiometry. Nuclear Reaction Analysis was used to measure the degree of S diffusion within the CdTe thin films. X-ray diffraction was used to determine the lattice parameter of the CdTe. Results showed the CdTe films deposited at low deposition rates (<2 nm s(-1)) exhibited greater S diffusion after a partial recrystallisation during annealing. Higher CdTe deposition rates correlated to increased Te concentration for the as-deposited films, significantly reduced during annealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：522 / 525

页数：4

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