Carrier mobility dependence of electron spin relaxation in GaAs quantum wells

被引：41

作者：

Terauchi, R

Ohno, Y

Adachi, T

Sato, A

Matsukura, F

Tackeuchi, A

Ohno, H

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

spin relaxation; GaAs/AlGaAs quantum well; spin orbit interaction;

D O I：

10.1143/JJAP.38.2549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the electron mobility (mu) dependence and the electron quantized energy dependence of the electron spin relaxation time (tau(s)) in n-type and undoped GaAs/AlGaAs multiple quantum wells at room temperature, tau(s) proportional to mu(-1) obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.

引用

页码：2549 / 2551

页数：3

共 14 条

[1]

ARONOV AG, 1983, ZH EKSP TEOR FIZ, V57, P680

[2] HOLE SPIN RELAXATION IN N-MODULATION DOPED QUANTUM-WELLS [J].