Agglomeration and percolation conductivity

被引:78
作者
Sieradzki, K [1 ]
Bailey, K
Alford, TL
机构
[1] Arizona State Univ, Dept Mech & Aerosp Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
[3] Arizona State Univ, NSF, Ctr Low Power Elect, Tempe, AZ 85287 USA
关键词
D O I
10.1063/1.1419043
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on results of agglomeration experiments for the Ag/SiO2/Si(100) system. Thin silver films, 100 nm in thickness, were annealed, and their electrical resistance was continuously monitored using a four-point probe technique. Scanning electron microscopy and digital image analysis were used to correlate the time-dependent agglomeration morphology to the sheet resistance of the Ag thin film. Our results indicated that the area fraction of the surface uncovered during agglomeration scaled linearly in time. We found that at fixed annealing temperature, the normalized sheet resistance followed power-law scaling in time, i.e., R similar to \t-tau\(-mu), (mu =1.25 +/-0.1) where tau corresponds to the time it takes to reach electrical failure of the sample. (C) 2001 American Institute of Physics.
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页码:3401 / 3403
页数:3
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