Spin tunneling magnetoresistance in NiFe/Al2O3/Co junctions with reduced dimensions formed using photolithography

被引:7
作者
Kumagai, S
Yaoi, T
Miyazaki, T
机构
[1] TOHOKU UNIV,FAC ENGN,DEPT APPL PHYS,SENDAI,MIYAGI 98077,JAPAN
[2] SONY CORP,RES CTR,YOKOHAMA,KANAGAWA 240,JAPAN
关键词
spin tunneling magnetoresistance; photolithography; metal/insulator junction; exchange coupling;
D O I
10.1016/S0304-8853(96)00441-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spin tunneling magnetoresistive effect has been investigated for NiFe/Al2O3/Co junctions with a small junction area down to 3.5 x 3.5 mu m(2) fabricated using photolithography. About 75% of the prepared junctions exhibit the spin tunneling magnetoresistive effect, the maximum value being around 1% at room temperature. Negative interlayer exchange coupling (J < 0) is found in these junctions. The strength of the coupling tends to increase with decreasing junction area.
引用
收藏
页码:71 / 74
页数:4
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