Spin tunneling magnetoresistance in NiFe/Al2O3/Co junctions with reduced dimensions formed using photolithography

被引：7

作者：

Kumagai, S

Yaoi, T

Miyazaki, T

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT APPL PHYS,SENDAI,MIYAGI 98077,JAPAN

[2] SONY CORP,RES CTR,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1997年 / 166卷 / 1-2期

关键词：

spin tunneling magnetoresistance; photolithography; metal/insulator junction; exchange coupling;

D O I：

10.1016/S0304-8853(96)00441-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spin tunneling magnetoresistive effect has been investigated for NiFe/Al2O3/Co junctions with a small junction area down to 3.5 x 3.5 mu m(2) fabricated using photolithography. About 75% of the prepared junctions exhibit the spin tunneling magnetoresistive effect, the maximum value being around 1% at room temperature. Negative interlayer exchange coupling (J < 0) is found in these junctions. The strength of the coupling tends to increase with decreasing junction area.

引用

页码：71 / 74

页数：4

共 9 条

[1] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].