Defect capture under rapid solidification of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface

被引：26

作者：

Emel'yanov, VI ^{[1
]}

Babak, DV ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 74卷 / 06期

关键词：

D O I：

10.1007/s003390100980

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultra-short (tau(p) = 10(-13) s) powerful laser pulses is developed. The period and time of formation of surface relief are calculated. Regimes of multi-pulse laser ablation leading to formation of either a smooth surface or arrays of surface-relief spikes are pointed out and corresponding experimental results are interpreted from the viewpoint of the developed theory.

引用

页码：797 / 805

页数：9

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