Theory and practice of on-the-fly and ultra-fast VT measurements for NBTI degradation Challenges and opportunities

被引：32

作者：

Islam, A. E. ^{[1
,2
]}

Kumar, E. N. ^{[2
]}

Das, H. ^{[2
]}

Purawat, S. ^{[2
]}

Maheta, V.

Aono, H. ^{[3
]}

Murakami, E. ^{[3
]}

Mahapatra, S. ^{[2
]}

Alam, M. A. ^{[1
]}

机构：

[1] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47906 USA

[2] IIT, Dept EE, Bombay, Maharashtra, India

[3] Renesas Technol, Tokyo, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On-the-fly and Ultra-fast V-T are popular characterization techniques for analyzing NBTI degradation. We show that these techniques do not probe the intrinsic NBTI degradation directly and hence require suitable correction. The 'corrected' data allows us to explore the subtlety of relaxation dynamics by various measurements and suggest a theoretical basis for log-t relaxation consistent within R-D framework.

引用

页码：805 / +

页数：2