Thermally activated depinning of a narrow domain wall from a single defect

被引：59

作者：

Attané, JP

Ravelosona, D

Marty, A

Samson, Y

Chappert, C

机构：

[1] CEA, DRFMC, F-38054 Grenoble 9, France

[2] Univ Paris 11, CNRS, IEF, F-91405 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.96.147204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe the field induced depinning process of a magnetic domain wall (DW) from a single bidimensional nanometric defect. The DW propagates in a wire lithographed on a film with strong perpendicular anisotropy. We observe a statistical distribution of the relaxation time consistent with a Neel-Brown picture of magnetization reversal. This indicates that the nanometric DW can be considered as an ideal monodomain particle switching over a single energy barrier. Such a stochastic character of DW depinning has to be taken into account for spintronic applications.

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页数：4

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