Grain boundary transport and vapor sensing in α-sexithiophene

被引：10

作者：

Schön, JH

Kloc, C

Dodabalapur, A

Crone, B

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1423787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge transport through an alpha -sexithiophene bi-crystal exposed to various gaseous agents is investigated in the temperature range from 4 to 300 K. This method allows a comparison between intragrain and grain boundary effects. The importance of grain boundaries for gas sensing applications is demonstrated. Charged trap states are formed at the grain boundaries, which lead to the change of the potential barrier at the boundary. Consequently, the charge transport properties are affected by the gas exposure. (C) 2001 American Institute of Physics.

引用

页码：3965 / 3967

页数：3

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