Energy-level dynamics of deep gap states in hydrogenated amorphous silicon under illumination

被引：8

作者：

Arkhipov, VI ^{[1
]}

Adriaenssens, GJ ^{[1
]}

机构：

[1] MOSCOW ENGN PHYS INST,MOSCOW 115409,RUSSIA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.54.16696

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Relaxation dynamics of deep defects, recently observed in modulated photocurrent and electron drift measurements, are explained in terms of random temporal fluctuations of localized-state energies. The fluctuations can be caused by a randomly changing microscopic configuration of excess charge carriers or by carrier annihilation processes. A model is developed which leads to dependences of the thermal emission energy upon temperature and optical bias, in good agreement with existing experimental data.

引用

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页码：16696 / 16700

页数：5

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