Investigation of damage-induced defects in silicon by TCT

被引：39

作者：

Fretwurst, E

Eremin, V

Feick, H

Gerhardt, J

Li, Z

Lindstrom, G

机构：

[1] RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG,RUSSIA

[2] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 388卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(97)00002-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Neutron- and Co-60 gamma-irradiated silicon detectors have been investigated using time-resolved current transients (TCT) induced by nanosecond laser pulses. Measurements were performed as a function of operating temperature (100-300 K) and bias voltage. Illumination was done on both the junction and ohmic side, allowing the investigation of the free charge carrier transport for electrons, respectively, holes separately. In this way, temperature-dependent trapping and detrapping effects as well as related electric field transformations have been studied and enable us to extract relevant defect parameters. Results achieved for the damaged detectors are presented and discussed in comparison with DLTS data.

引用

页码：356 / 360

页数：5

共 6 条

[1] DETERMINATION OF THE FERMI-LEVEL POSITION FOR NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS AND MATERIALS USING THE TRANSIENT CHARGE TECHNIQUE (TCHT) [J].