Optimization of transistor structure for transistor-stabilized field emitter arrays

被引：8

作者：

Matsukawa, T ^{[1
]}

Koga, K

Kanemaru, S

Tanoue, H

Itoh, J

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Matsushita Elect Ind Co Ltd, Moriguchi, Osaka 570, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 11期

关键词：

electron emission; field emitter arrays; impact ionization; reliability testing; vacuum microelectronics;

D O I：

10.1109/16.796305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of the metal-oxide-semiconductor field-effect transistor (MOSFET)-stabilized field emitters at high-field operation has been assessed by comparing two different MOSFET structures. Electrical characteristics and behavior of carriers in the device structure have been investigated by means of device simulation. One structure, which is referred to as the externally connected-MOSFET emitter, exhibits an anomalous increase in drain current, which is induced by impact ionization at the drain edge. Upon evaluating the emission characteristics, it was clarified that the anomalous current increase induced by the impact ionization degraded stability and controllability of the emission current significantly. The other structure, which is referred to as the MOSFET-structured emitter, shows higher reliability with negligible effect of impact ionization.

引用

页码：2261 / 2264

页数：4

共 9 条

[1] Emission characteristics of ion-implanted silicon emitter tips [J].