Local p-type conductivity in n-GaN and n-ZnO layers due to inhornogeneous dopant incorporation

被引：15

作者：

Krtschil, A

Look, DC

Fang, ZQ

Dadgar, A

Diez, A

Krost, A

机构：

[1] Univ Magdeburg, Inst Expt Phys, D-39016 Magdeburg, Germany

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

defects; conductivity domains; mixed conductivity; p-type ZnO;

D O I：

10.1016/j.physb.2005.12.176

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on scanning capacitance microscopy (SCM) investigations of Fe-doped GaN and nitrogen-doped ZnO layers. Macroscopically, these samples electrically behave in conventional I-V and C-V measurements like semi-insulating or n-type material, respectively. However, in SCM we found local p-type regions surrounded by an n-type matrix instead of homogeneous and uniform layer conductivity. A comparison with topography reveales that these p-type islands with extensions in the micrometer scale exclusively appear in the vicinity of structural defects and grain boundaries. This doping related effect is discussed in terms of selective dopant incorporation at these defects. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：703 / 706

页数：4

共 11 条

[1] Heteroepitaxy and nitrogen doping of high-quality ZnO [J].

Dadgar, A ;

Oleynik, N ;

Bläsing, J ;

Deiter, S ;

Forster, D ;

Bertram, F ;

Diez, A ;

Seip, M ;

Greiling, A ;

Christen, J ;

Krost, A .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :800-804

[2]

Dadgar A, 2002, PHYS STATUS SOLIDI A, V192, P308, DOI 10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO

[3]

2-M

[4]

Dadgar A, 2001, PHYS STATUS SOLIDI A, V188, P155, DOI 10.1002/1521-396X(200111)188:1<155::AID-PSSA155>3.0.CO

[5]

2-P

[6] Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].

De Wolf, P ;

Stephenson, R ;

Trenkler, T ;

Clarysse, T ;

Hantschel, T ;

Vandevorst, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368

[7]

DEWOLF P, ELECT TESTING APPL M

[8] Microscopic evidence of point defect incorporation in laterally overgrown GaN [J].

Gradecak, S ;

Wagner, V ;

Ilegems, M ;

Riemann, T ;

Christen, J ;

Stadelmann, P .

APPLIED PHYSICS LETTERS, 2002, 80 (16) :2866-2868

[9] Self-organized domain formation in low-dislocation-density GaN [J].

Riemann, T ;

Christen, J ;

Beaumont, B ;

Faurie, JP ;

Gibart, P .

SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) :833-847

[10]

RIEMANN T, UNPUB COMMUNICATION

← 1 2 →