Scaling possibility of PZT capacitors for high density and low-voltage NVFRAM application

Scaling limit of the PZT capacitors for high-density and low-voltage Nonvolatile Ferroelectric RAM (NVFRAM) is described using the memory operation scheme for data lead-out. The analysis is performed using the measured switching polarization characteristics of our 3 x 3 mu m(2) PZT capacitors applicable to 1 Mbit NVFRAM. 16Mbit NVFRAM can be realized with simple shrinkage of our planar-type PZT capacitor without having to fabricate a stacked or trench capacitor.